GaN is one of many materials which are difficult to analyze with the conventional Al Kα X-ray source due to a strong overlap between the N 1s core line and the Ga LMM Auger series. This brings difficulties with accurate quantification and also chemical state assignment. In this applications note, GaN was analyzed using different X-ray excitation sources with the aim of shifting the binding energy position of the Ga LMM Auger series to prevent its interference with the N 1s region. Automation of changing between the Al Kα and Ag Lα excitation sources when using the Kratos AXIS Supra⁺ is an added benefit.

DOI : 10.5281/zenodo.431123